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| Ordering number : ENN7519 50C02SS NPN Epitaxial Planar Silicon Transistor 50C02SS Low-Frequency General-Purpose Amplifier Applications Applications * Package Dimensions unit : mm 2159A [50C02SS] Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit. Features * * * 0.3 * Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175m [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). Top View 1.4 0.3 Side View 0.1 0.25 3 0.8 1 0.45 0.2 2 Bottom View 0.07 0.07 1.4 Side View 0.6 3 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 2 1 Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a glass-epoxy board (20!30!1.6mm) Conditions Ratings 60 50 5 400 800 200 150 --55 to +150 Unit V V V mA mA mW C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=10mA VCE=10V, IC=50mA 300 500 Conditions Ratings min typ max 100 100 800 MHz Unit nA nA Marking : YN Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52703 TS IM TA-100152 No.7519-1/4 50C02SS Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=10V, f=1MHz IC=100mA, IB=10mA IC=100mA, IB=10mA IC=10A, IE=0 IC=1mA, RBE= IE=10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 60 50 5 30 340 55 Ratings min typ 2.8 50 0.9 100 1.2 max Unit pF mV V V V V ns ns ns Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 + 220F VBE= --5V + 470F VCC=25V RB RL IC=20IB1= --20IB2=200mA 500 IC -- VCE A A1 5m 600 IC -- VBE VCE=2V 450 7mA Collector Current, IC -- mA 30mA 350 300 250 200 150 100 50 0 0 3mA Collector Current, IC -- mA 20m 400 10m A 8mA 5mA 500 400 2mA 1mA 600A 200A 300 C 25C 200 100 IB=0 100 200 300 400 500 600 700 800 900 1000 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT05107 Collector-to-Emitter Voltage, VCE -- mV 1000 7 5 3 2 IT05106 3 hFE -- IC Base-to-Emitter Voltage, VBE -- V VCE(sat) -- IC Ta=75C Ta=7 5 --25C IC / IB=10 2 3 VCE=2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 25C --25C DC Current Gain, hFE 100 100 7 5 3 2 2 10 7 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05108 5 1.0 2 3 5 7 10 2 3 --2 5 7 100 5 C 3 25 C Ta = 5 75 C 7 5 7 1000 IT05411 Collector Current, IC -- mA Collector Current, IC -- mA No.7519-2/4 50C02SS 3 VCE(sat) -- IC IC / IB=20 1000 7 VCE(sat) -- IC IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 5 3 2 100 7 5 Ta =7 5 C C --2 5 25 C 100 7 5 3 2 C 25 = Ta 75 C --2 C 5 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05109 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05110 Collector Current, IC -- mA 10 7 VBE(sat) -- IC Collector Current, IC -- mA 10 Cob -- VCB f=1MHz IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 Output Capacitance, Cob -- pF 2 3 5 7 1000 IT05111 5 7 5 1.0 7 5 3 2 25C Ta= --25C 3 75C 2 0.1 1.0 2 3 5 7 10 2 3 5 7 100 1.0 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 1000 fT -- IC Collector-to-Base Voltage, VCB -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IT05112 Ron -- IB IN VCE=10V f=1MHz 1k 1k IB Gain-Bandwidth Product, fT -- MHz OUT 7 5 3 2 100 1.0 ON Resistance, Ron -- 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05113 0.1 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- mA 250 PC -- Ta Base Current, IB -- mA 7 10 IT06092 Collector Dissipation, PC -- mW 200 M ou nt ed 150 on ag las s-e po 100 xy bo ar d( 20 !3 50 0! 1 .6m m ) 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT05114 No.7519-3/4 50C02SS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2003. Specifications and information herein are subject to change without notice. PS No.7519-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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